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BC636-10-BP View Datasheet(PDF) - Micro Commercial Components

Part Name
Description
View to exact match
BC636-10-BP
MCC
Micro Commercial Components MCC
BC636-10-BP Datasheet PDF : 2 Pages
1 2
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
Through Hole Package
Capable of 830mWatts of Power Dissipation
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Value
Unit
Collector-Emitter Voltage
BC636
-45
V
VCEO
BC638
-60
V
BC640
-100
V
VCBO
Collector-Base Voltage
BC636
-45
V
BC638
-60
V
BC640
-80
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-1.0
A
IB
Base Current
TJ
Junction Temperature
-100
mA
-65 to +150
TSTG
Storage Temperature
-65 to +150
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO (IC=-1mAdc,IB=0)
BC636 -45
BC638 -60
BC640 -80
ICBO
Collector Cutoff Current
(VCB=-30Vdc, IE=0)
---
IEBO
Emitter Cutoff Current
(VEB=-5.0Vdc, IC=0)
---
hFE(1)
DC Current Gain
(VCE=-2Vdc, IC=-5mAdc)
40
DC Current Gain
hFE(2) (VCE=-2Vdc, IC=-150mAdc) BC636-10
63
BC636-16,BC638 ,BC640
100
hFE(3)
DC Current Gain
(VCE=-2Vdc, IC=-500mAdc)
25
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc,IB=-50mAdc)
---
VBE(on)
Base-Emitter Voltage
(IC=-500mAdc, VCE=-2Vdc)
---
fT
Transition Frequency
(VCE=-5.0Vdc, IC=-50mAdc, f=100MHz)
100
---
---
Vdc
Vdc
Vdc
--- -0.1 μAdc
--- -0.1 μAdc
--- ---
160
250
--- -0.5 Vdc
--- -1.0 Vdc
--- --- MHz
BC636-10
BC636-16
BC638
BC640
PNP Epitaxial
Silicon Transistors
TO-92
A
E
B
C
D
ECB
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
Revision: 1
www.mccsemi.com
1 of 2
2011/01/01
 

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