BC160 View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BC160 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistors
Product specification
BC160; BC161
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
hFE
VCEsat
VBE
Cc
Ce
fT
collector cut-off current
emitter cut-off current
DC current gain
BC160-10; BC161-10
IE = 0; VCB = −40 V
−
IE = 0; VCB = −40 V; Tj = 150 °C
−
IC = 0; VEB = −5 V
−
IC = −100 µA; VCE = −1 V
−
BC160-16; BC161-16
−
DC current gain
BC160-10; BC161-10
IC = −100 mA; VCE = −1 V
63
BC160-16; BC161-16
100
DC current gain
IC = −1 A; VCE = −1 V
BC160-10; BC161-10
−
BC160-16; BC161-16
−
collector-emitter saturation voltage IC = −1 A; IB = −100 mA
−
base-emitter voltage
IC = −1 A; VCE = −1 V
−
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz −
emitter capacitance
IC = ic = 0; VEB = −0.5 V; f = 1 MHz −
transition frequency
IC = −50 mA; VCE = −10 V;
50
f = 100 MHz
−10 −100 nA
−10 −100 µA
−
−100 nA
80 −
120 −
100 160
160 250
20 −
30 −
−0.6 −1 V
−1 −1.7 V
−
30 pF
−
180 pF
−
−
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = −100 mA; IBon = −5 mA;
IBoff = 5 mA
−
−
500 ns
−
−
650 ns
1997 May 12
4
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