datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

BAT30-AWFILM View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BAT30-AWFILM Small signal Schottky diodes ST-Microelectronics
STMicroelectronics ST-Microelectronics
BAT30-AWFILM Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BAT30
Characteristics
Table 5.
Symbol
Dynamic characteristics
Parameter
Test conditions
C Diode capacitance
VR = 0 V, F = 1 MHz
VR = 1 V, F = 1 MHz
VR = 10 V, F = 1 MHz
Min. Typ Max. Unit
-
22
-
-
14
-
pF
-
6
-
Figure 1. Power dissipation versus average Figure 2. Average forward current versus
forward current
ambient temperature (δ = 1)
P (W)
0.175
0.150
δ=0.05 δ=0.1
δ=0.2
δ=0.5
δ=1
0.125
0.100
0.075
0.050
T
0.025
IF(AV) (A)
δ=tp/T
tp
0.000
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
IF(AV) (A)
0.35
0.30
0.25
0.20
0.15
0.10
T
0.05
δ=tp/T
tp
0.00
0
25
50
Tamb (° C)
75
100
125
150
Figure 3.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.E+00
Zth(j-a)/Rth(j-a)
Single pulse
SOT-23
1.E-01
1.E-02
1.E-03
1.E-02
Alumine substrate
10 x 8 x 0.5 mm
tP(s)
1.E-01
1.E+00
1.E+01
1.E+02
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.E+00
Zth(j-a)/Rth(j-a)
Single pulse
SOT-323/SOD-323
1.E-01
Epoxy printed board FR4
Copper surface = 2.25 mm2
Coppr thickness = 35 µm
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tP(s)
1.E+00 1.E+01 1.E+02 1.E+03
Doc ID 12564 Rev 3
3/14
Direct download click here
 

Share Link : ST-Microelectronics
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]