BAS85 View Datasheet(PDF) - TY Semiconductor

Part Name

Description

View to exact match

BAS85

Schottky Darrier Diode

TY Semiconductor 

Product specification

1BAS85

Features

Low forward voltage

High breakdown voltage

Guard ring protected

LL-34

2.64REF

0.50

0.30

3.70

3.30

Unit: mm

1.60

1.30

Absolute Maximum Ratings Ta = 25

Parameter

continuous reverse voltage

continuous forward current

average forward current (VRWM = 25 V; a = 1.57; ä = 0.5)

repetitive peak forward current (tp 1 s; ä 0.5)

non-repetitive peak forward current (tp = 10 ms)

thermal resistance from junction to ambient

operating ambient temperature

junction temperature

storage temperature

Symbol

VR

IF

IF(AV)

IFRM

IFSM

Rth j-a

Tamb

Tj

Tstg

Rating

30

200

200

300

5

320

-65 to +125

125

-65 to +150

Electrical Characteristics Ta = 25

Parameter

forward voltage

reverse current

diode capacitance

Symbol

VF

IR

Cd

Testconditons

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 30 mA

IF = 100 mA

VR = 25 V *

f = 1 MHz; VR = 1 V

* Pulsed test: tp = 300 ìs; ä = 0.02.

Unit

V

mA

mA

mA

A

K/W

Max Unit

240

320

400 mV

500

800

2.3

A

10 pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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