BAS85 View Datasheet(PDF) - General Semiconductor

Part Name

Description

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BAS85

Schottky Diodes

General Semiconductor 

BAS85

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Reverse Breakdown Voltage

tested with 10 µA Pulses

V(BR)R

30

–

Forward Voltage

Pulse Test tp < 300 µs, δ < 2%

at IF = 0.1 mA

at IF = 1 mA

at IF = 10 mA

at IF = 30 mA

at IF = 100 mA

VF

–

–

VF

–

–

VF

–

–

VF

–

0.5

VF

–

–

Leakage Current

at VR = 25 V

Capacitance

at VR = 1 V, f = 1 MHz

Thermal Resistance

Junction to Ambient Air

IR

–

0.2

Ctot

–

–

RthJA

–

–

Reverse Recovery Time

trr

from IF = 10 mA to IR = 10 mA to IR = 1 mA

–

–

1) Valid provided that electrodes are kept at ambient temperature.

Max.

Unit

–

V

0.24

V

0.32

V

0.4

V

–

V

0.8

V

2

µA

10

pF

4301)

K/W

5

ns

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