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KA1M0565R-YDTU View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KA1M0565R-YDTU
Fairchild
Fairchild Semiconductor Fairchild
KA1M0565R-YDTU Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KA1M0565R/KA1H0565R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Drain source breakdown voltage
BVDSS VGS=0V, ID=50µA
650 -
-
V
Zero gate voltage drain current
IDSS
Static drain source on resistance (note) RDS(ON)
Forward transconductance (note)
gfs
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=2.5A
VDS=50V, ID=2.5A
-
-
50 µA
-
- 200 µA
- 1.76 2.2
2.5
-
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
- 1457 -
-
130 -
pF
- 38.8 -
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on) VDD=0.5BVDSS, ID=5.0A
-
tr
(MOSFET switching
-
time are essentially
td(off) independent of
-
tf
operating temperature)
-
-
60
- 150
nS
- 300
- 130
Total gate charge
(gate-source+gate-drain)
Gate source charge
Gate drain (Miller) charge
Qg
VGS=10V, ID=5.0A,
VDS=0.5BVDSS (MOSFET
-
-
56
Qgs
switching time are
- 10.3 -
nC
essentially independent of
Qgd operating temperature)
- 22.3 -
Note:
Pulse test: Pulse width 300µS, duty cycle 2%
S = -1--
R
3
 

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