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K0530WS View Datasheet(PDF) - TY Semiconductor

Part Name
Description
View to exact match
K0530WS Datasheet PDF : 1 Pages
1
Features
Very Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
High Conductance
Product specification
K0530WS(B0530WS)
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
IFSM
(JEDEC Method)
Power dissipation *
Typical Thermal Resistance Junction to Ambient *
Operating and storage temperature range
PD
RèJA
Tj,Tstg
* Valid provided that terminals are maintained at ambient temperature.
Rating
Unit
30
V
21
0.5
2
235
426
-40 to +125
V
A
A
mW
/W
Electrical Characteristics Ta = 25
Parameter
Reverse Breakdown Voltage
Forwarad voltage
Leakage current
Junction Capacitance
Symbol
Testconditons
V(BR)R IR = 500 A
IF = 0.1A
VF
IF = 0.5A
VR = 15V
IR VR = 20V
VR = 30V
CJ VR = 0, f = 1.0MHz
Min Typ Max Unit
30
V
0.36
V
0.41 0.45
80
100
A
500
60
pF
Marking
Marking
SE
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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