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2SA1015 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Toshiba
Toshiba Toshiba
2SA1015 Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015
2SA1015
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 1dB (typ.) (f = 1 kHz)
Complementary to 2SC1815.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
JEDEC
TO-92
Collector power dissipation
Junction temperature
Storage temperature range
PC
400
mW
Tj
125
°C
Tstg
55~125
°C
JEITA
TOSHIBA
SC-43
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE (1)
VCE = −6 V, IC = −2 mA
70
(Note)
hFE (2) VCE = −6 V, IC = −150 mA
25
VCE (sat) IC = −100 mA, IB = −10 mA
VBE (sat) IC = −100 mA, IB = −10 mA
fT
VCE = −10 V, IC = −1 mA
80
Cob
VCB = −10 V, IE = 0, f = 1 MHz
rbb’
VCE = −10 V, IE = 1 mA, f = 30 MHz
NF
VCE = −6 V, IC = −0.1 mA, RG = 10 kΩ,
f = 1 kHz
⎯ −0.1 μA
⎯ −0.1 μA
400
80
0.1 0.3
V
1.1
V
MHz
4
7
pF
30
Ω
1.0
10
dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
1
2007-11-01
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