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8050S View Datasheet(PDF) - Unspecified

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Description
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8050S Datasheet PDF : 2 Pages
1 2
TO-92 Plastic-Encapsulate Transistors
8050S TRANSISTOR (NPN)
FEATURES
z Complimentary to 8550S
z Collector current: IC=0.5A
TO-92
1.EMITTER
2.COLLECTOR
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Power Dissipation
0.625
W
TJ
Junction Temperature
Tstg
Storage Temperature
150
-55-150
3.BASE
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Test conditions
IC= 100μA, IE=0
IC= 0.1mA, IB=0
IE= 100μA, IC=0
VCB= 40 V , IE=0
VCE= 20 V , IB=0
VEB= 5V, IC=0
VCE= 1V, IC= 50mA
VCE= 1V, IC= 500mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE= 6V, IC=20mA
f =30MHz
MIN
40
25
5
85
50
150
TYP
C
120-200
D
160-300
123
MAX
0.1
0.1
0.1
400
UNIT
V
V
V
μA
μA
μA
0.6
V
1.2
V
MHz
D3
300-400
 

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