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RS1A View Datasheet(PDF) - LiteOn Technology

Part Name
Description
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RS1A Datasheet PDF : 2 Pages
1 2
LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
FAST RECOVERY RECTIFIERS
RS1A thru RS1M
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
Fast switching for high efficiency
For surface mounted applications
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
SMA
SMA
A
DIM. MIN. MAX.
A
4.06 4.57
B
C
B
2.29 2.92
C
1.27 1.63
D
0.15 0.31
G
H
F
D
E
E
4.83 5.59
F
0.05 0.20
G
2.01 2.40
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL RS1A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
50
VRMS
35
VDC
50
Maximum Average Forward
Rectified Current
@TL =90 C I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
VF
Maximum DC Reverse Current
@TJ =25 C
IR
at Rated DC Blocking Voltage
@TJ =125 C
Maximum Reverse Recovery Time (Note 1)
TRR
Typical Junction Capacitance (Note 2)
CJ
RS1B
100
70
100
RS1D
200
140
200
150
RS1G
400
280
400
1.0
RS1J
600
420
600
30
1.3
5.0
200
250
15
RS1K
800
560
800
RS1M
1000
700
1000
UNIT
V
V
V
A
A
V
uA
500
ns
pF
Typical Thermal Resistance (Note 3)
R0JL
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Lead.
30
-55 to +150
-55 to +150
C/W
C
C
REV. 4, May-2009, KSEA01
 

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