K3892 View Datasheet(PDF) - Panasonic Battery Group

Part Name

Description

View to exact match

K3892

Silicon N-channel power MOSFET

Panasonic Battery Group 

2SK3892

This product complies with the RoHS Directive (EU 2002/95/EC).

 Electrical Characteristics (continued) TC = 25°C±3°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Diode forward voltage

VDSF IDR = 22 A, VGS = 0

-1.5

V

Reverse recovery time

Reverse recovery charge

trr L = 230 mH, VDD = 100 V

Qrr IDR = 11.0 A, di / dt = 100 A/ms

127

ns

756

nC

Gate charge load

Qg

50

nC

Gate-source charge

Qgs VDD = 100 V, ID = 11.0 A, VGS = 10 V

12

Gate-drain charge

Qgd

18

Thermal resistance (ch-c)

Rth(ch-c)

3.13

/ Thermal resistance (ch-a)

Rth(ch-a)

62.5

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

nC

nC

°C/W

°C/W

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2

SJG00043BED

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