K360 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

View to exact match

K360

Silicon N-Channel MOS FET

Renesas Electronics 

2SK360

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Gate current

Channel power dissipation

Channel temperature

Storage temperature

Note: 1. VGS = –4 V

Symbol

VDSX*1

VGSS

ID

IG

Pch

Tch

Tstg

Ratings

20

±5

30

±1

150

150

–55 to +150

(Ta = 25°C)

Unit

V

V

mA

mA

mW

°C

°C

Electrical Characteristics

Item

Drain to source breakdown voltage

Gate cutoff current

Drain current

Gate to source cutoff voltage

Forward transfer admittance

Symbol

V(BR)DSX

IGSS

IDSS *1

VGS(off)

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Min

20

—

6

0

8

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Power gain

PG

—

Noise figure

NF

—

Note: 1. The 2SK360 is grouped by IDSS as follows.

Typ

—

—

—

—

14

2.5

1.6

0.03

30

2.0

Max

—

±20

12

–2.0

—

—

—

—

—

—

Unit

V

nA

mA

V

mS

pF

pF

pF

dB

dB

(Ta = 25°C)

Test conditions

ID = 100 µ A, VGS = –4 V

VGS = ±5 V, VDS = 0

VDS = 10 V, VGS = 0

VDS = 10 V, ID = 10 µA

VDS = 10 V, VGS = 0,

f = 1 kHz

VDS = 10 V, VGS = 0,

f = 1 MHz

VDS = 10 V, VGS = 0,

f = 100 MHz

Mark

IDSS

Grade

E

IGE

6 to 10

F

IGF

8 to 12

Rev.2.00, Aug 10.2005, page 2 of 5

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