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K3133S View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
K3133S
Hitachi
Hitachi -> Renesas Electronics Hitachi
K3133S Datasheet PDF : 5 Pages
1 2 3 4 5
2SK3133(L),2SK3133(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note 1
D(pulse)
I DR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
Ratings
Unit
30
V
±20
V
50
A
200
A
50
A
50
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 30
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
RDS(on)
resistance
Forward transfer admittance
Input capacitance
|yfs|
Ciss
TBD
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward voltage VDF
Body–drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ
7
12
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max
±0.1
10
2.5
10
18
Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 1
ID = 25 A, VGS = 10 V Note 1
ID = 25 A, VGS = 4 V Note 1
ID = 25 A, VDS = 10 V Note 1
VDS = 10V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 10 V
ID = 50 A
VGS = 10 V, ID = 25 A
RL = 0.4
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0
diF/ dt = 50 A/ µs
2
 

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