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K1215E Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1215E Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1215E Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1215
Maximum Channel Dissipation Curve
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
10.0
VDS = 10 V
8.0
F
6.0
E
4.0
2.0
0
–2.0 –1.6 –1.2 –0.8 –0.4 0
Gate to Source Voltage VGS (V)
Forward Transfer Admittance vs.
Drain Current
100
VDS = 10 V
50
f = 1 kHz
20
10
5
2
1
0.2 0.5 1.0 2
5 10 20
Drain Current ID (mA)
Typical Output Characteristics
10
VGS = 0 V
8
–0.1
6
–0.2
–0.3
4
–0.4
–0.5
2
–0.6
–0.7
–0.8
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Forward Transfer Admittance vs.
Drain to Source Voltage
20
16
12
8
4
VGS = 0
f = 1 kHz
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Input Capacitance vs.
Drain to Source Voltage
20
VGS = 0
f = 1 MHz
10
5
2
1.0
0.5
0.5 1.0 2
5 10 20
Drain to Source Voltage VDS (V)
Rev.2.00 Aug 10, 2005 page 3 of 5
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