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K1215F Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1215F Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1215F Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1215
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Note: 1. VGS = –4 V
Symbol
VDSX*1
VGSS
ID
IG
Pch
Tch
Tstg
Ratings
20
±5
30
±1
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSX
20
Gate cutoff current
Drain current
IGSS
IDSS*1
6
Gate to source cutoff voltage
VGS(off)
0
Forward transfer admittance
|yfs|
8
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Power gain
PG
24
Noise figure
NF
Note: 1. The 2SK1215 is grouped by IDSS as follows.
Typ
14
2.5
1.6
0.03
Max
±20
12
–2.0
3
Unit
V
nA
mA
V
mS
pF
pF
pF
dB
dB
(Ta = 25°C)
Test conditions
ID = 100 µA, VGS = –4 V
VGS = ±5 V, VDS = 0
VDS = 10 V, VGS = 0
VDS = 10 V, ID = 10 µA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0,
f = 100 MHz
Mark
IDSS
Grade
E
IGE
6 to 10
F
IGF
8 to 12
Rev.2.00 Aug 10, 2005 page 2 of 5
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