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K1151 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1151 Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1151 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Static Drain to Source on State
Resistance vs. Temperature
10
ID = 2 A
8
VGS = 10 V
Pulse Test
6
1A
4
0.5 A
2
0
–40 0
40 80 120 160
Case Temperature TC (°C)
1,000
Body to Drain Diode Reverse
Recovery Time
500 di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
200
100
50
20
10
0.05 0.1 0.2 0.5 1.0 2
5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
100 V
250 V
400
16
VDS
400 V
300
12
VGS
200
8
100
VDD = 400 V ID = 1.5 A 4
250 V
100 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
VDS = 20 V
2 Pulse Test –25°C
1.0
TC = 25°C
0.5
75°C
0.2
0.1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current ID (A)
1,000
100
Typical Capacitance
vs. Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
10
Crss
1
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
VGS = 10 V
VDD
=
30
V
50
PW = 2 µs, duty < 1%
td (off)
20
tf
10
5
td (on)
tr
2
1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
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