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K1151L Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1151L Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1151L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1151
2SK1152
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol Min
Typ
Drain to source breakdown 2SK1151 V(BR)DSS 450
voltage
2SK1152
500
Gate to source breakdown voltage
V(BR)GSS
±30
Gate to source leak current
IGSS
Zero gate voltage drain 2SK1151
IDSS
current
2SK1152
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on 2SK1151 RDS(on)
3.5
state resistance
2SK1152
4.0
Forward transfer admittance
|yfs|
0.6
1.1
Input capacitance
Ciss
160
Output capacitance
Coss
45
Reverse transfer capacitance
Crss
5
Turn-on delay time
td(on)
5
Rise time
tr
10
Turn-off delay time
td(off)
20
Fall time
tf
10
Body to drain diode forward voltage
VDF
1.0
Body to drain diode reverse recovery
trr
220
time
Note: 3. Pulse test
Ratings
450
500
±30
1.5
6
1.5
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
100
3.0
5.5
6.0
(Ta = 25°C)
Unit
Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 10 V *3
S
ID = 1 A, VDS = 20 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 1 A, VGS = 10 V,
ns RL = 30
ns
ns
V IF = 1.5 A, VGS = 0
ns IF = 1.5 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
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