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2SK1152L View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part NameDescriptionManufacturer
2SK1152L Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
2SK1152L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SK1151(L)(S), 2SK1152(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1151
2SK1152
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
450
V
500
±30
V
1.5
A
6
A
1.5
A
20
W
150
°C
–55 to +150
°C
2
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