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2SD1525 View Datasheet(PDF) - Toshiba

Part Name
Description
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2SD1525 Datasheet PDF : 4 Pages
1 2 3 4
2SD1525
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1525
High Current Switching Applications
Unit: mm
High collector current: IC = 30 A
High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A)
Monolithic construction with built-in base-emitter shunt resistor.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
30
A
Base current
IB
5
A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
PC
150
W
JEDEC
Tj
150
°C
Tstg
55 to 150
°C
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
2 k
100
EMITTER
1
2009-08-06
 

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