Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0; L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=7.5A; IB=2.5A
VBEsat Base-emitter saturation voltage
IC=7.5A; IB=2.5A
ICBO
Collector cut-off current
VCB=640V; IE=0
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE
DC current gain
IC=7.5A ; VCE=5V
Product Specification
2SC2902
MIN TYP. MAX UNIT
400
V
9
V
1.0
V
1.5
V
50
μA
50
μA
10
35
2