2SC1008-Y View Datasheet(PDF) - Tiger Electronic
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2SC1008-Y Datasheet PDF : 2 Pages
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TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC1008 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching and Amplification
TO – 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
60
8
700
800
156
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE (sat)
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.01mA,IC=0
VCB=60V,IE=0
VEB=5V,IC=0
VCE=2V, IC=50mA
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCB=10V,IC=0, f=1MHz
VCE=10V,IC= 50mA
Min Typ Max Unit
80
V
60
V
8
V
0.1
μA
0.1
μA
40
400
0.4
V
1.1
V
8
pF
30
MHz
CLASSIFICATION OF hFE
RANK
R
RANGE
40-80
O
70-140
Y
120-240
G
200-400
B,Aug,2014
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