2SB1502 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

View to exact match

2SB1502

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

J.

C/

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Darlington Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB1502

DESCRIPTION

• High DC Current Gain-

: hFE= 5000(Min)@lc= -4A

• Low-Collector Saturation Voltage-

: VCE(satr -2.5V(Max.)@lc= -4A

• Complement to Type 2SD2275

APPLICATIONS

• Designed for power amplifier applications

• Optimum for 55W HiFi output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25x:)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

1 23

PIN 1.BASE

2. COLLECTOR

3. EMITTER

TO-3PL package

in. * T

\

D

A

uWf U

iW !'-**M

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

Ic

Collector Current-Continuous

I CM

Collector Current-Peak

Collector Power Dissipation

@ Tc=25"C

PC

Collector Power Dissipation

@ Ta=25-C

Tj

Junction Temperature

Tstg

Storage Temperature Range

-5

V

-5

A

-8

A

60

W

3.5

150

°C

-55-150

'C

mm

DIM WIN

A 2S.50

B 1950

C 4.50

D 0.90

E 2.30

F 2.40

G 10.80

H 3.10

J 0^0

K 20.00

N 3.90

P 2.40

q 3.10

R 1.90

U 3.90

W 2.90

MAX

20 JO

5.50

1.10

1.20

2.60

11.00

3.30

0.70

21.00

4.10

2.60

3.50

2.10

4.10

3.10

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders.

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