datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

B1185 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
B1185
Iscsemi
Inchange Semiconductor Iscsemi
B1185 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50μA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50μA; IC=0
VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A
VBEsat Base-emitter saturation voltage
IC=-2A ;IB=-0.2A
ICBO
Collector cut-off current
VCB=-40V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-500mA ; VCE=-3V
fT
Transition frequency
IC=-0.5A; VCE=-5V
COB
Collector output capacitance
IE=0;f=1MHz ; VCB=-10V
‹ hFE Classifications
D
E
F
60-120 100-200 160-320
Product Specification
2SB1185
MIN TYP. MAX UNIT
-50
V
-60
V
-5
V
-1.0
V
-1.5
V
-1.0 μA
-1.0 μA
60
320
70
MHz
50
pF
2
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]