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2PC4617Q View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
2PC4617Q NPN general purpose transistor NXP
NXP Semiconductors. NXP
2PC4617Q Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NXP Semiconductors
2PC4617
NPN general-purpose transistor
7. Characteristics
Table 6. Characteristics
Tamb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
ICBO
IEBO
collector-base
cut-off current
emitter-base
cut-off current
IE = 0 A; VCB = 30 V
IE = 0 A; VCB = 30 V;
Tj = 150 °C
IC = 0 A; VEB = 4 V
-
-
100
nA
-
-
5
μA
-
-
100
nA
hFE
DC current gain IC = 1 mA; VCE = 6 V
[1]
2PC4617Q
120
-
270
2PC4617R
180
-
390
2PC4617S
270
-
560
VCEsat collector-emitter IC = 50 mA; IB = 5 mA
[1] -
-
200
mV
saturation
voltage
Cc
collector
IE = ie = 0 A;
-
-
1.5
pF
capacitance
VCB = 12 V; f = 1 MHz
fT
transition
IC = 2 mA; VCE = 12 V;
[1] 100
-
-
MHz
frequency
f = 100 MHz
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
2PC4617_5
Product data sheet
Rev. 05 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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