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2PA1576 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
2PA1576
Philips
Philips Electronics Philips
2PA1576 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1576
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
note 1
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
MAX.
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PA1576Q
2PA1576R
2PA1576S
saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V
120
180
270
IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 12 V; f = 1 MHz
IC = 2 mA; VCE = 12 V; f = 100 MHz 100
TYP.
2.5
MAX. UNIT
100 nA
5
µA
100 nA
270
390
560
500
3.5
mV
pF
MHz
1999 May 31
3
 

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