Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1576
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
note 1
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
MAX.
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PA1576Q
2PA1576R
2PA1576S
saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
IE = 0; VCB = −30 V
−
IE = 0; VCB = −30 V; Tj = 150 °C
−
IC = 0; VEB = −4 V
−
IC = −1 mA; VCE = −6 V
120
180
270
IC = −50 mA; IB = −5 mA; note 1
−
IE = ie = 0; VCB = −12 V; f = 1 MHz
−
IC = −2 mA; VCE = −12 V; f = 100 MHz 100
TYP.
−
−
−
−
−
−
−
2.5
−
MAX. UNIT
−100 nA
−5
µA
−100 nA
270
390
560
−500
3.5
−
mV
pF
MHz
1999 May 31
3