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2N5116 View Datasheet(PDF) - Linear Technology

Part Name
Description
View to exact match
2N5116
Linear
Linear Technology Linear
2N5116 Datasheet PDF : 2 Pages
1 2
Linear Integrated Systems
2N5114 SERIES
SINGLE P-CHANNEL JFET
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
75
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 200°C
Junction Operating Temperature
-55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation
500mW
Maximum Currents
Gate Current
-50mA
Maximum Voltages
Gate to Drain
30V
Gate to Source
30V
TO-18
BOTTOM VIEW
G 2 3D
S1
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
2N5114
2N5115
2N5116
TYP
UNIT
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
30
30
30
VGS(off) Gate to Source Cutoff Voltage
5 10 3
6
1
4
VGS(F) Gate to Source Forward Voltage -0.7
-1
-1
-1.0
-1.3
-1
V
VDS(on) Drain to Source On Voltage
-0.7
-0.5
-0.8
-0.6
IDSS Drain to Source Saturation Current2
-30 -90
mA
-15 -60 -5 -25
IGSS Gate Leakage Current
IG Gate Operating Current
5
500
500
500
-5
-10
-500
pA
ID(off) Drain Cutoff Current
-10
-10
-500
-500
rDS(on) Drain to Source On Resistance
75
100
150
CONDITIONS
IG = 1µA, VDS = 0V
VDS = -15V, ID = -1nA
IG = -1mA, VDS = 0V
VGS = 0V, ID = -15mA
VGS = 0V, ID = -7mA
VGS = 0V, ID = -3mA
VDS = -18V, VGS = 0V
VDS = -15V, VGS = 0V
VGS = 20V, VDS = 0V
VDG = -15V, ID = -1mA
VDS = -15V, VGS = 12V
VDS = -15V, VGS = 7V
VDS = -15V, VGS = 5V
VGS = 0V, ID = -1mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
 

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