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2N2907A View Datasheet(PDF) - Secos Corporation.

Part Name
Description
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2N2907A
Secos
Secos Corporation. Secos
2N2907A Datasheet PDF : 5 Pages
1 2 3 4 5
Elektronische Bauelemente
2N2907A
PNP Silicon
General Purpose Transistor
10
8.0
6.0
IC = -1.0 mA, Rs = 430
-500 µA, Rs = 560
-50 µA, Rs = 2.7 k
4.0
-100 µA, Rs = 1.6 k
2.0
Rs = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
10
f = 1.0 kHz
8.0
6.0
IC = -50 µA
-100 µA
-500 µA
4.0
-1.0 mA
2.0
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
-0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -2-030
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
400
300
200
100
80
VCE = -20 V
60
TJ = 25°C
40
30
20
-1.0 -2.0
-5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
-500 -1000
Figure 10. Current–Gain — Bandwidth Product
-1.0
TJ = 25°C
-0.8
-0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
+0.5
0
RqVC for VCE(sat)
-0.5
-1.0
-1.5
-2.0
RqVB for VBE
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 4 of 5
 

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