|1SV282_||RF Manual 16th edition|
|1SV282_ Datasheet PDF : 130 Pages |
This RF Manual provides updated information on RF applications that are
grouped as follows: wireless and broadband communication infrastructure, TV
and satellite, portable devices, automotive, ISM, and aerospace and defense.
We describe in detail the new developments in our core technologies, QUBiC4
(SiGe:C) and LDMOS. We have also added GaN technology to our product
offering; this key technology lets high-power amplifiers deliver very high
efficiency in next-generation wireless communication systems.
New products include GaN power amplifiers, a complete line of overmolded
plastic (OMP) RF power transistors and MMICs, and our eighth generation
LDMOS transistors (Gen8). Next-generation devices and improved products
include GPS LNAs, medium power amplifiers, IF gain blocks, satellite LNB ICs
and CATV modules.
Our portfolio for the wireless communication infrastructure has expanded, with
a comprehensive set of amplifiers (low noise, variable gain, medium power, and
high power Doherty amplifiers), mixers, IQ modulators and synthesizers, so you
can build a highly efficient signal chain for transmit line-ups and receive chains.
The Design Support section is updated and includes all available tools,
documents, materials and links that ease the design-in of our products.
We’re relentless in our commitment to RF innovation, and have the infrastructure and insight to inspire confidence
in your performance-critical applications. We bring focus to complex RF problems so you are free to push the
performance limits of your application, realize your design vision, and gain a competitive edge for your enterprise.
What you are reading is more than a guide, it's a tool that lets you unleash your RF performance: the 16th edition
of the RF Manual.
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page
NXP Semiconductors RF Manual 16th edition
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