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1SV228_
NXP
NXP Semiconductors. NXP
1SV228_ Datasheet PDF : 0 Pages
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2.1.4 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8
NXP announced last year the 8th generation of its renowned RF power device portfolio for base stations.
Listening carefully to the world’s leading infrastructure providers and understanding their requirements, we
took a holistic approach to the development of Gen8. This means that we scrutinized every detail of a power
transistor and reconsidered the entire “transistor system” to ceate a new generation that performs markedly
better than its predecessors, and its competitors, and again sets standards for the industry.
Gen8 addresses the key trends in the wireless
infrastructure industry
` Increasing signal bandwidths up to 100 MHz to enable
full-band operation
` Cost sensitivity: peak powers up to 270 Watts in SOT502-
sized packages
` Reduction in the size/weight/volume of the cabinet
` The ongoing need for greater electrical efficiency to reduce
cooling requirements and operational expenditures
` Ever-increasing output power
` The need to deploy multi-standard and future-proof
solutions
Gen8 is the answer to all these often conflicting requirements.
The package and die design, as well as the input and output
match structures, have been optimized to enable wideband,
affordable, compact, multi-standard, and highly efficient
Doherty power amplifiers. Solutions for all cellular frequency
bands are currently being sampled and are in production or
will be released throughout 2012.
The first wave of Gen8 transistors
Type
fmin
(MHz)
fmax
(MHz)
P1dB
(W)
BLF8G10L(S)-160
920
960
160
BLF8G10L(S)-160V
700
1000
160
BLF8G10LS-200GV
700
1000
200
BLF8G10LS-270GV
700
1000
270
BLF8G10L(S)-300P
850
960
300
BLF8G10LS-400PGV
700
1000
400
BLF8G20L(S)-200V
1800
2000
200
BLF8G20LS-270GV
1800
2000
270
BLF8G20LS-270PGV
1800
2000
270
BLF8G22LS-160BV
2000
2200
160
BLF8G22LS-200GV
2000
2200
200
BLF8G22LS-270GV
2000
2200
270
BLF8G22LS-400PGV
2000
2200
400
BLF8G24L(S)-200P
2300
2400
200
BLF8G27LS-140G
2500
2700
140
BLF8G27LS-140V
2600
2700
140
BLF8G27LS-200PGV
2500
2700
200
BLF8G27LS-280PGV
2500
2700
280
Note: All devices are internally matched (I/O)
48
NXP Semiconductors RF Manual 16th edition
Matching Package
I/O
SOT502
I/O
SOT1244
I/O
SOT1244C
I/O
SOT1244C
I/O
SOT539
I/O
SOT1242C
I/O
SOT1120
I/O
SOT1244C
I/O
SOT1242C
I/O
SOT1120B
I/O
SOT1244C
I/O
SOT1244C
I/O
SOT1242C
I/O
SOT539
I/O
SOT502E
I/O
SOT1244B
I/O
SOT1242C
I/O
SOT1242C
Planned
release
Released
Released
Q412
Q412
Q312
Q412
Released
Q412
Q412
Released
Q312
Q312
Q312
Q312
Q412
Q412
Q412
Q412
Description
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM,
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM,
WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM & LTE
applications
Gen8 ceramic LDMOS transistor for GSM & LTE
applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM &
LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
 

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