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1SV246_ View Datasheet(PDF) - NXP Semiconductors.

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1SV246_
NXP
NXP Semiconductors. NXP
1SV246_ Datasheet PDF : 0 Pages
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1.6 Industrial, scientific & medical (ISM)
1.6.1 Broadcast / ISM
Application diagram
TV exciter
DVB-T
typ. 5 kW DVB-T
harmonic
output power
filter power
monitor
amplifiers
Driver stages
typ. 0.5 kW
DVB-T
8× final
Recommended broadcast products
Function
Product
Driver
fmin (MHz) fmax (MHz) P1dB (W)
10
500
20
1
1400
35
1
1000
100
1
1000
140
HPA
10
10
Final
470
1400
128
860
200
1200
500
470
860
300
470
860
600
470
860
600
VDS (V)
50
32
40
50
32
50
42
50
50
50
ηD (%)
70
63
60
49
70
75
47
46
46
46
Gp (dB)
27.5
19
21
21
18
28.5
21
21
21
21
Test signal
CW
CW
CW
CW
pulsed
pulsed
CW
CW
CW
CW
Package
SOT467C
SOT467C
SOT467
SOT467
SOT1121
SOT539A
SOT539A
SOT1121
SOT539
SOT539
Type
BLF571
BLF642
BLF871(S)
BLF881(S)
BLF647P(S)*
BLF178P
BLF879P
BLF884P(S)
BLF888A(S)
BLF888B(S)
Recommended ISM products
Function
HPA
Product
Driver
Final
fmin (MHz)
1
10
10
10
10
10
1300
2400
2400
2400
2400
fmax (MHz)
2500
128
128
500
500
500
1300
2500
2500
2500
2500
P1dB (W)
12
600
1400
200
600
1400
250
180
140
200
250
Matching
I
-
-
-
-
-
I
I/O
I/O
I/O
I/O
VDS (V)
28
50
50
50
50
50
50
28
28
28
28
* Check status in section 3.1, as this type is not yet released for mass production
ηD (%)
60
75
72
70
70
69
56
55
52
52
55
Gp (dB)
19
28
29
24
26
23
17
12
17.5
15
15
Test signal
CW
pulsed
pulsed
pulsed
pulsed
pulsed
CW
CW
CW
CW
CW
Package
SOT975
SOT539
SOT539
SOT1121
SOT539
SOT539
SOT1121
SOT539
SOT502
SOT502
SOT539
Type
BLF25M612(G)*
BLF174XR(S)*
BLF178XR(S)
BLF572XR(S)*
BLF574XR(S)*
BLF578XR(S)
BLF6G13L(S)-250P
BLF2425M6L(S)180P*
BLF2425M7L(S)140*
BLF2425M7L(S)200*
BLF2425M7L(S)250P*
Product highlight:
BLF578XR Power LDMOS transistor
Designed for broadband operation, this 1400 W extremely rugged
LDMOS power transistor supports broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced
version of the BLF578. It uses NXP's XR process to provide maximum
ruggedness capability in the most severe applications without
compromising RF performance.
Features
` Output power = 1400 W
` Power gain = 23 dB
` High Efficiency = 69 %
` Integrated ESD protection
` Excellent ruggedness
` Excellent thermal stability
NXP Semiconductors RF Manual 16th edition
35
 

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