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1SV263 View Datasheet(PDF) - NXP Semiconductors.

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Description
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1SV263
NXP
NXP Semiconductors. NXP
1SV263 Datasheet PDF : 0 Pages
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1.3.5 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV
Application diagram
terrestrial input
input amplifier
terrestrial
input
amplifiers
LNB
output
amplifiers
SWITCH MATRIX
FOR 4 × 4,
NEEDS 16
(SINGLE) PIN
DIODES
coax out to STB
coax out to STB
coax out to STB
coax out to STB
brb023
Recommended products
Function
Product
Input
amplifier
terrestrial
MMIC
General
purpose
medium
power
amplifier
Package
SOT89
SOT908
Function
Product
MMIC
Input
amplifier
LNB
RF bipolar
transistor
General
purpose
amplifier
Wideband
transistor
SiGe:C
transistor
Package
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343
SOT143
SOT143
SOT343F
Function
Product
Package
Switch
matrix
RF diode
PIN diode Various
RF transistor
SiGe:C
transistor
SOT343F
^ Also available in ultra-small leadless package SOD882D
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
Type
BGA2771
BGA2866
BGA2867
BGA2818
BFG325
BFG425W
BFG520
BFG540
BFU660F
BFU725F/N1
BFU730F
Type
BAP50^
BAP51^
BAP63^
BAP64^
BAP70^
BAP1321^
BFU725F/N1
BFU730F
Function
Product
Output
amplifier
MMIC
RF bipolar
transistor
General
purpose
medium
power
amplifier
General
purpose
amplifier
Wideband
transistor
SiGe:C
transistor
Package
SOT89
SOT908
SOT363
SOT363
SOT223
SOT223
SOT223
SOT143
SOT343F
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
BGM1011
BGA2869
BFG135
BFG 591
BFG198
BFG540
BFU725F/N1
BFU730F
Product highlight:
PIN diodes for switching matrix
In addition to delivering outstanding RF performance, this component
simplifies design-in because of its extremely low forward resistance,
diode capacitance, and series inductance. Significant board space
is saved by supplying a range of highly compact package options,
including SOD523, SOD323 and leadless SOD882D.
Features
` High isolation, low distortion, low insertion loss
` Low forward resistance (Rd) and diode capacitance (Cd)
` Ultra-small package options
22
NXP Semiconductors RF Manual 16th edition
 

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