Q1NK60ZR View Datasheet(PDF) - Microsemi Corporation
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Q1NK60ZR
Microsemi Corporation
Q1NK60ZR Datasheet PDF : 14 Pages
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STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test Condictions
Min. Typ. Max. Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 1mA, VGS= 0
600
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
VDS = MaxRating @125°C
1
µA
50 µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±20V
±10 µA
VGS(th) Gate Threshold Voltage
VDS= VGS, ID = 50µA
3 3.75 4..5 V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10V, ID= 0.4A
13
15
Ω
Table 5. Dynamic
Symbol
Parameter
Test Condictions
Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =15V, ID = 0.4A
0.5
S
Ciss Input Capacitance
94
pF
Coss
Crss
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V, f=1 MHz, VGS=0
17.6
2.8
pF
pF
Coss
(2)
eq .
Equivalent Output
Capacitance
VGS=0, VDS =0V to 480V
11
pF
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=480V, ID = 0.8A
VGS =10V
(see Figure 11)
4.9 6.9 nC
1
nC
2.7
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Rev 7
3/14
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