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1N6391 View Datasheet(PDF) - Naina Semiconductor ltd.

Part NameDescriptionManufacturer
1N6391 Schottky Barrier Rectifier Diode NAINA
Naina Semiconductor ltd. NAINA
1N6391 Datasheet PDF : 2 Pages
1 2
Naina Semiconductor Ltd.
1N6391
Schottky Barrier Rectifier Diode
Features
Fast Switching
Low forward voltage drop, VF
Guard ring protection
High surge capacity
High efficiency, low power loss
Electrical Ratings (TC = 250C, unless otherwise noted)
Parameter
Symbol Values Units
Repetitive peak reverse voltage
DC blocking voltage
VRRM
45
V
VDC
Non-repetitive peak reverse
voltage
VRSM
54
V
Average rectified forward current
(TC = 850C)
IF(AV)
25
A
Non-repetitive peak surge current
(surge applied at rated load
conditions, halfwave, single phase,
IFSM
600
A
60 Hz
Maximum Ratings (TC = 250C, unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
Maximum instantaneous reverse current at rated DC voltage
DO-203AA (DO-4)
Test Conditions
IF = 5 A
IF = 50 A
TC = 125OC
TC = 100OC
Symbol
VF
IR
Values
0.44
0.78
40
400
Units
V
V
mA
mA
Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted)
Parameters
Symbol
Maximum thermal resistance, junction to case
Rth(JC)
Operating junction temperature range
TJ
Storage temperature
Tstg
Mounting torque (non-lubricated threads)
Approximate allowable weight
W
Values
2.0
-65 to +125
-65 to +125
15
45.6
Units
0C/W
0C
0C
in-lb
g
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