datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

FQD7N10L View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD7N10L 100V LOGIC N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQD7N10L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
100 --
ID = 250 µA, Referenced to 25°C -- 0.1
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
--
--
--
--
1
10
100
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.9 A
VGS = 5 V, ID = 2.9 A
VDS = 30 V, ID = 2.9 A
(Note 4)
1.0 --
--
0.275
0.300
-- 4.6
2.0
0.35
0.38
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 220 290
-- 55
72
-- 12
15
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 7.3 A,
RG = 25
--
9
30
-- 100 210
-- 17
45
(Note 4, 5) --
50
110
VDS = 80 V, ID = 7.3 A,
-- 4.6 6.0
VGS = 5 V
-- 1.0
--
(Note 4, 5) --
2.6
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- 23.2
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.8 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7.3 A,
-- 70
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
140
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.23mH, IAS = 5.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 7.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Direct download click here
 

Share Link : Fairchild
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]