K3306 View Datasheet(PDF) - NEC => Renesas Technology
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Description
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K3306
NEC => Renesas Technology
K3306 Datasheet PDF : 8 Pages
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2SK3306
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Drain Leakage Current
IDSS
5 Gate to Source Leakage Current
IGSS
100
±100
µA VDS = 500 V, VGS = 0 V
nA VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
5 Forward Transfer Admittance
5 Drain to Source On-state Resistance
5 Input Capacitance
VGS(off)
| yfs |
RDS(on)
Ciss
2.5
3.5
1.0 3.0
1.35 1.5
700
V VDS = 10 V, ID = 1 mA
S VDS = 10 V, ID = 2.5 A
Ω VGS = 10 V, ID = 2.5 A
pF VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
115
pF
Reverse Transfer Capacitance
Crss
6
pF
Turn-on Delay Time
td(on)
16
ns VDD = 150 V, ID = 2.5 A, VGS(on) = 10 V,
Rise Time
tr
3
ns RG = 10 Ω, RL = 60 Ω
Turn-off Delay Time
td(off)
33
ns
Fall Time
5 Total Gate Charge
5 Gate to Source Charge
5 Gate to Drain Charge
5 Body Diode Forward Voltage
tf
QG
QGS
QGD
VF(S-D)
5.5
ns
13
nC VDD = 400 V, VGS(on) = 10 V, ID = 5.0 A
4
nC
4.5
nC
1.0
V IF = 5.0 A, VGS = 0 V
Reverse Recovery Time
5 Reverse Recovery Charge
trr
0.7
µs IF = 5.0 A, VGS = 0 V, di/dt = 50 A / µs
Qrr
3.3
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
RL
VGS
VGS
Wave Form
10 %
0
VGS(on) 90 %
VDD
ID
90 %
ID
ID
0 10 %
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
2
Data Sheet D14004EJ2V0DS00
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