2SD1047 View Datasheet(PDF) - STMicroelectronics
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2SD1047 Datasheet PDF : 10 Pages
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2SD1047
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 200 V
0.1 µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
0.1 µA
V(BR)CEO(1)
Collector-emitter
breakdown voltage (IB = 0)
IC = 50 mA
140
V
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
200
V
V(BR)EBO(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
6
V
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = 5 A
IC = 7 A
IB = 500 mA
IB = 700 mA
0.5 V
0.7 V
VBE
Base-emitter voltage
VCE = 5 V IC = 5 A
1.3 V
hFE
DC current gain
IC = 1 A
IC = 5 A
VCE = 5 V
60
VCE = 4 V
50
200
fT
Transition frequency
IC = 0.5 A VCE = 12 V
20
MHz
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V f = 1 MHz
150
pF
Resistive Load
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC = 60 V IC = 5 A
IB1 = -IB2 = 0.5 A
0.22
µs
4.3
µs
0.5
µs
1. Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Doc ID 018729 Rev 1
3/10
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