MT29F64G08CFABAWP View Datasheet(PDF) - Micron Technology

Part Name

Description

View to exact match

MT29F64G08CFABAWP

Asynchronous/Synchronous NAND NAND Flash Memory / 52-pad LGA / 48-pin TSOP / 100-ball BGA

Micron Technology 

Micron Confidential and Proprietary

32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND

Features

Part Numbering Information

Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by

using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,

visit www.micron.com/products. Contact the factory for devices not found.

Figure 1: Part Numbering

MT 29F 32G 08 C B A B A WP

Micron Technology

NAND Flash

29F = NAND Flash memory

Density

32G = 32Gb

64G = 64Gb

128G = 128Gb

256G = 256Gb

Device Width

08 = 8 bits

Level

Bit/Cell

C 2-bit

Classification

Die # of CE# # of R/B# I/O

B

1

1

1

Common

E

2

2

2

Separate

F

2

2

2

Common

J

4

2

2

Common

K

4

2

2

Separate

M4

4

4

Separate

U8

4

4

Separate

Operating Voltage Range

A

C

=

=

VVCCCC: :

3.3V

3.3V

(2.7–3.6V),

(2.7–3.6V),

VVCCCCQQ: :

3.3V

1.8V

(2.7–3.6V)

(1.7–1.95V)

Note: 1. Pb-free package.

ES :B

Design Revision

B = Second revision

Production Status

Blank = Production

ES = Engineering sample

Reserved for Future Use

Blank

Operating Temperature Range

Blank = Commercial (0°C to +70°C)

IT = Industrial (–40°C to +85°C)

Speed Grade (synchronous mode only)

-12 = 166 MT/s

Package Code

C5 = 52-pad VLGA 14mm x 18mm x 1.0mm1

H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1

H2 = 100-ball TBGA 12mm x 18mm x 1.2mm1

H3 = 100-ball LBGA 12mm x 18mm x 1.4mm1

WP = 48-pin TSOP1 (CPL)

Interface

A = Async only

B = Sync/Async

Generation Feature Set

B = Second set of device features

PDF: 09005aef836c9ded

Rev. F 12/09 EN

2

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2008 Micron Technology, Inc. All rights reserved.

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