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AD100-8-S1 View Datasheet(PDF) - Unspecified

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AD100-8-S1
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AD100-8-S1 Datasheet PDF : 2 Pages
1 2
Pacific Silicon Sensor Series 8 Data Sheet
Part Description AD100-8-TO52-S1
Order # 06-035
ACTIVE AREA: 0.00785 mm 2
(100 µm DIA)
Ø 5.40
Ø 3.00 116°
VIEWING
Ø 4.70
ANGLE
PIN 1
CATHODE
Ø0.46
3 PL
Ø 2.54
PIN CIRCLE
FRONTSIDE VIEW
2.70
3.60
±1
12.7
3 PL
PIN 4
CASE
PIN 3
ANODE
BACKSIDE VIEW
FEATURES
• ∅ 100 µm active area
High gain at low bias voltage
Fast rise time
Low capacitance
DESCRIPTION
0.00785 mm2 High Speed, High Gain Avalanche
Photodiode with N on P construction. Hermetically
packaged in a TO-52-S1 with a clear borosilicate glass
window cap.
APPLICATIONS
High speed optical
communications
Laser range finder
Medical equipment
High speed photometry
S
C
ABSOLUTE MAXIMUM RATING
SYMBOL PARAMETER MIN
TSTG
Storage Temp
-55
TOP
Operating Temp
-40
TSOLDERING
Soldering Temp
10 seconds
Electrical Power
Dissipation @ 22°C
-
Optical Peak Value,
once for 1 second
-
IPH (DC)
Continuous Optical
Operation
-
IPH (AC)
Pulsed Signal Input
50 µs “on” / 1 ms “off”
-
MAX
+125
+100
+260
100
200
250
1
UNITS
°C
°C
°C
mW
mW
µA
mA
SPECTRAL RESPONSE at M = 100
60
50
40
30
20
10
0
400
500
600
700
800
900 1000 1100
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP MAX UNITS
ID
Dark Current
M = 100*
C
Capacitance
M = 100*
VBR
Breakdown Voltage
ID = 2 µA
Temperature Coefficient of VBR
Responsivity
M = 100; = 0 V; λ = 800 nm
---
50
100
pA
---
0.8
---
pF
120
190
---
V
0.35
0.45
0.55
V/K
45
50
---
A/W
∆ƒ3dB
Bandwidth
-3dB
2
---
---
GHz
tr
Rise Time
Optimum Gain
---
---
180
ps
50
60
---
“Excess Noise” factor
M = 100
---
2.2
---
“Excess Noise” index
Noise Current
M = 100
M = 100
---
0.2
---
---
0.15
---
pA/Hz1/2
Max Gain
200
---
---
NEP
Noise Equivalent Power
M = 100; λ = 880 nm
---
3.0 X 10-15
---
W/Hz1/2
* Measurement conditions: Setup of photo current 50 pA at M = 1 and irradiated by a 680 nm, 60 nm bandwidth LED. Increase the photo
current up to 5.0 nA, (M = 100) by internal multiplication due to an increasing bias voltage.
8/23/2010
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