NXP Semiconductors
2PA1774xMB series
40 V, 100 mA PNP general-purpose transistors
−1200
VBE
(mV)
−1000
(1)
−800
(2)
−600
−400
(3)
mdb664
−103
VCEsat
(mV)
−102
(1)
(2)
(3)
mdb665
−200
−10−1
−1
−10
−102
−103
IC (mA)
−10
−10−1
−1
−10
−102
−103
IC (mA)
VCE = 6 V
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 3. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 10
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
−1200
VBEsat
(mV)
-1000
(1)
−800
(2)
−600
(3)
−400
mdb666
−200
−10−1
−1
−10 IC (mA) −102
IC/IB = 10
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 5. Base-emitter saturation voltage as a function
of collector current; typical values
103
RCEsat
(Ω)
102
mdb668
10
(1)
(2)
1
−10−1
−1
(3)
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 6. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
2PA1774XMB_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 March 2012
© NXP B.V. 2012. All rights reserved.
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