STP6N80K5 View Datasheet(PDF) - STMicroelectronics
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Description
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STP6N80K5
STMicroelectronics
STP6N80K5 Datasheet PDF : 24 Pages
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STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
16
-
ns
VDD = 400 V, ID = 2.25 A, -
7.5
-
ns
RG = 4.7 Ω, VGS = 10 V
- 28.5 -
ns
-
16
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
-
ISDM(1) Source-drain current (pulsed)
-
VSD(2) Forward on voltage
ISD = 4.5 A, VGS = 0
-
4.5 A
18 A
1.5 V
trr
Reverse recovery time
- 280
ns
Qrr Reverse recovery charge
ISD = 4.5 A, VDD = 60 V
-
2.2
di/dt = 100 A/µs,
μC
IRRM Reverse recovery current
- 15.5
A
trr
Reverse recovery time
ISD = 4.5 A,VDD = 60 V
- 450
ns
Qrr Reverse recovery charge
di/dt =1 00 A/µs,
- 3.15
μC
IRRM Reverse recovery current
Tj = 150 °C
- 14
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
.
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID = 0
30 -
-
V
The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD
capability of the device. The Zener voltage is appropriate for efficient and cost-effective
intervention to protect the device integrity. These integrated Zener diodes thus eliminate the
need for external components.
DocID024661 Rev 2
5/24
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