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HCF4013BEY View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
HCF4013BEY
ST-Microelectronics
STMicroelectronics ST-Microelectronics
HCF4013BEY Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HCF4013B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200K, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
Test Condition
Value (*)
Unit
Min. Typ. Max.
tTLH tTHL Propagation Delay Time
5
(CLOCK to Q or Q outputs)
10
15
150 300
65 130 ns
45 90
tPLH Propagation Delay Time
5
(SET to Q or RESET to Q)
10
150 300
65 130 ns
15
tPHL Propagation Delay
5
Time(SET to Q or RESET
10
to Q)
15
tTHL tTLH Transition Time
5
10
15
fCL (1)
Maximum Clock Input
Frequency
5
10
15
45 90
200 400
85 170 ns
60 120
100 200
50 100 ns
40 80
3.5 7
8 16
MHz
12 24
tW Clock Pulse Width
5
10
140 70
60 30
ns
15
tr , tf (2)
Clock Input Rise or Fall
Time
5
10
15
tW Set or Reset Pulse Width
5
10
15
tsetup Data Setup Time
5
10
15
40 20
15
4 µs
1
180 90
80 40
ns
50 25
40 20
20 10
ns
15 7
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
(1) Input tr, tf = 5ns
(2) If more than unit is cascaded in a parallel clocked application, tr should be made less than or equal to the sum of the fixed propagation
delay time at 15pF and the transition time of the carry output driving stage for the estimated capacitive load.
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