2SD1620-TD-E View Datasheet(PDF) - ON Semiconductor
Part Name
Description
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| 2SD1620-TD-E Datasheet PDF : 0 Pages | |||
Ordering number : EN1719D
2SD1620
Bipolar Transistor
10V, 3A, Low VCE(sat), NPN Single PCP
http://onsemi.com
Features
• Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted
• Large current capacity and highly resistant to breakdown
• Excellent linearity of hFE in the region from low current to high current
• Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SD1620-TD-E
1.5
Conditions
Ratings
Unit
30
V
20
V
10
V
6
V
3
A
5
A
Continued on next page.
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
TD
Electrical Connection
2
1
3
Semiconductor Components Industries, LLC, 2013
September, 2013
82212 TKIM/31010EA TKIM/31005TN(PC)/21599TH (KT)/N1596TS(KOTO)8-7707/5277KI/3045MW, TS No.1719-1/6
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