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29F128G08CEAAA View Datasheet(PDF) - Micron Technology

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29F128G08CEAAA
Micron
Micron Technology Micron
29F128G08CEAAA Datasheet PDF : 159 Pages
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64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND
Command Definitions
Table 5: Command Set (Continued)
Command
Erase Operations
ERASE BLOCK
ERASE BLOCK
MULTI-PLANE
Copyback Operations
COPYBACK READ
COPYBACK PROGRAM
COPYBACK PROGRAM
MULTI-PLANE
Command
Cycle #1
60h
60h
00h
85h
85h
Number of
Valid
Address
Cycles
3
3
5
5
5
Data
Input
Cycles
Valid While
Command Selected LUN
Cycle #2
is Busy1
Valid While
Other LUNs
are Busy2
Notes
D0h
Yes
D1h
Yes
35h
Optional
10h
Optional
11h
Yes
6
Yes
Yes
Notes:
1. Busy means RDY = 0.
2. These commands can be used for interleaved die (multi-LUN) operations (see Interleaved
Die (Multi-LUN) Operations (page 108)).
3. The READ ID (90h) and GET FEATURES (EEh) output identical data on rising and falling
DQS edges.
4. The SET FEATURES (EFh) command requires data transition prior to the rising edge of
CLK, with identical data for the rising and falling edges.
5. Command cycle #2 of 11h is conditional. See CHANGE ROW ADDRESS (85h) (page 79)
for more details.
6. This command can be preceded by up to one READ PAGE MULTI-PLANE (00h-32h) com-
mand to accommodate a maximum simultaneous two-plane array operation.
7. Issuing a READ PAGE CACHE-series (31h, 00h-31h, 00h-32h, 3Fh) command when the ar-
ray is busy (RDY = 1, ARDY = 0) is supported if the previous command was a READ PAGE
(00h-30h) or READ PAGE CACHE-series command; otherwise, it is prohibited.
8. Issuing a PROGRAM PAGE CACHE (80h-15h) command when the array is busy (RDY = 1,
ARDY = 0) is supported if the previous command was a PROGRAM PAGE CACHE
(80h-15h) command; otherwise, it is prohibited.
PDF: 09005aef83d2277a
Rev. A 11/09 EN
50
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2009 Micron Technology, Inc. All rights reserved.
 

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