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29F64G08CBAAA View Datasheet(PDF) - Micron Technology

Part NameDescriptionManufacturer
29F64G08CBAAA NAND Flash Memory Micron
Micron Technology Micron
29F64G08CBAAA Datasheet PDF : 159 Pages
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Micron Confidential and Proprietary
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64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND
Bus Operation – Asynchronous Interface
Figure 25: tFall and tRise (VCCQ = 2.7-3.6V)
3.50
3.00
2.50
2.00
V
1.50
1.00
0.50
0.00
–1
0
tFall tRise
2
4
0
TC
2
4
6
Vccq 3.3V
Notes:
1. tFALL is VOH(DC) to VOL(AC) and tRISE is VOL(DC) to VOH(AC).
2. tRise dependent on external capacitance and resistive loading and output transistor im-
pedance.
3. tRise primarily dependent on external pull-up resistor and external capacitive loading.
4. tFall = 10ns at 3.3V
5. See TC values in Figure 29 (page 37) for approximate Rp value and TC.
Figure 26: tFall and tRise (VCCQ = 1.7-1.95V)
3.50
3.00
2.50
2.00
V
1.50
tFall
tRise
1.00
0.50
0.00
-1
0
2
4
0
2
TC
4
6
Vccq 1.8V
Notes:
1. tFALL is VOH(DC) to VOL(AC) and tRISE is VOL(DC) to VOH(AC).
2. tRise is primarily dependent on external pull-up resistor and external capacitive loading.
3. tFall 7ns at 1.8V.
4. See TC values in Figure 29 (page 37) for TC and approximate Rp value.
PDF: 09005aef83d2277a
Rev. A 11/09 EN
35
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2009 Micron Technology, Inc. All rights reserved.
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