|29F64G08CBAAA||NAND Flash Memory|
|29F64G08CBAAA Datasheet PDF : 159 Pages |
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64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND
These devices use NAND Flash electrical and command interfaces. Data, commands,
and addresses are multiplexed onto the same pins and received by I/O control circuits.
The commands received at the I/O control circuits are latched by a command register
and are transferred to control logic circuits for generating internal signals to control de-
vice operations. The addresses are latched by an address register and sent to a row
decoder to select a row address, or to a column decoder to select a column address.
Data is transferred to or from the NAND Flash memory array, byte by byte, through a
data register and a cache register.
The NAND Flash memory array is programmed and read using page-based operations
and is erased using block-based operations. During normal page operations, the data
and cache registers act as a single register. During cache operations, the data and cache
registers operate independently to increase data throughput.
The status register reports the status of die (LUN) operations.
Figure 10: NAND Flash Die (LUN) Functional Block Diagram
Vcc Vss Vccq Vssq
Notes: 1. N/A: This signal is tri-stated when the asynchronous interface is active.
2. Some devices do not include the synchronous interface.
Rev. A 11/09 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2009 Micron Technology, Inc. All rights reserved.
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