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K1166 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1166 Silicon N Channel MOS FET Renesas
Renesas Electronics Renesas
K1166 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1165, 2SK1166
Main Characteristics
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
8V
6V
16
5.5 V
12
5.0 V
8
4.5 V
4
VGS = 4 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
15 A
6
10 A
4
ID = 5 A
2
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1.0
0.3
0.1
1
DC OPpWer=at1io0nm(1TsCm(1=s1s20h50o°µ1Ct)0s) µs
Ta = 25°C
2SK1166
2SK1165
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
16
VDS = 20 V
Pulse Test
12
8
75°C
4
–25°C
TC = 25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
VGS = 10 V
1.0
0.5
15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20 50
Drain Current ID (A)
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