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K1166 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1166 Silicon N-Channel MOS FET / TO-3P Package Hitachi
Hitachi -> Renesas Electronics Hitachi
K1166 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SK1165, 2SK1166
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SK1165 V(BR)DSS 450
breakdown voltage 2SK1166
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1165 IDSS
drain current
2SK1166
Gate to source cutoff voltage VGS(off) 2.0
Static Drain to source 2SK1165 RDS(on)
on state resistance 2SK1166
Forward transfer admittance |yfs|
6.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward
VDF
voltage
Body to drain diode reverse
t rr
recovery time
Note: 1. Pulse test
Typ Max Unit
V
V
±10 µA
250 µA
3.0
V
0.40 0.55
0.45 0.60
10
S
1450 —
pF
410 —
pF
55
pF
20
ns
70
ns
120 —
ns
60
ns
1.0
V
450 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 6 A, VGS = 10 V *1
ID = 6 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 6 A, VGS = 10 V,
RL = 5
IF = 12 A, VGS = 0
IF = 12 A, VGS = 0,
diF/dt = 100 A/µs
3
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