ZXT13P12DE6 View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

View to exact match

ZXT13P12DE6

SuperSOT4™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Diodes Incorporated. 

ZXT13P12DE6

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO -20

-33

V

IC=-100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO -12

-25

V

IC=-10mA*

Emitter-Base Breakdown Voltage V(BR)EBO -7.5

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector Emitter Cut-Off Current ICES

Collector-Emitter Saturation

Voltage

VCE(sat)

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

300

Ratio

300

200

20

Transition Frequency

fT

-8.5

-100

-100

-100

-7.5

-68

-135

-200

-150

-10

-90

-175

-250

-175

-1.0

-0.9

500

450

900

300

30

55

V

nA

nA

nA

mV

mV

mV

mV

mV

V

V

MHz

IE=-100␮A

VCB=-16V

VEB=-6V

VCES=-16V

IC=-0.1A, IB=-10mA*

IC=-1A, IB=-10mA*

IC=-3A, IB=-50mA*

IC=-4A, IB=-50mA*

IC=-4A, IB=-400mA*

IC=-4A, IB=-50mA*

IC=-4A, VCE=-2V*

IC=-10mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-4A, VCE=-2V*

IC=-15A, VCE=-2V*

IC=-50mA, VCE=-10V

f=50MHz

Output Capacitance

Cobo

115

Turn-On Time

t(on)

70

Turn-Off Time

t(off)

265

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle  2%

pF

VCB=-10V, f=1MHz

ns

VCC=-10V, IC=-3A

IB1=IB2=-60mA

ns

ISSUE 1 - DECEMBER 1999

4

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