ZTX600 View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
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ZTX600 Datasheet PDF : 3 Pages
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OBSOLETE
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 JUNE 94
FEATURES
* 160 Volt VCEO
* 1 Amp continuous current
* Gain of 5K at IC=1 Amp
* Ptot= 1 Watt
ZTX600
ZTX601
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
ZTX600 ZTX601
160
180
140
160
10
4
1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
V(BR)CBO 160
Breakdown Voltage
180
V
IC=100µA
Collector-Emitter V(BR)CEO 140
160
V
IC=10mA*
Breakdown Voltage
Emitter-Base
V(BR)EBO 10
10
V
IE=100µA
Breakdown Voltage
Collector Cut-Off ICBO
Current
Emitter Cut-Off
IEBO
Current
0.01
10
µA
0.01 µA
µA
10 µA
VCB=140V
VCB=160V
VCB=140V,T==100°C
VCB=160V,T==100°C
0.1
0.1 µA VEB=8V
Colllector-Emitter ICES
Cut-Off Current
Collector-Emitter VCE(sat)
Saturation Voltage
Base-Emitter
VBE(sat)
Saturation Voltage
10
0.75 1.1
0.85 1.2
1.7 1.9
µA VCES=140V
10 µA VCES=160V
0.75 1.1 V
0.85 1.2 V
IC=0.5A, IB=5mA*
IC=1A, IB=10mA*
1.7 1.9 V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.5 1.7
1.5 1.7 V
IC=1A, VCE=5V*
3-206
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