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Z0402MF Просмотр технического описания (PDF) - STMicroelectronics

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Z0402MF 4 A Triacs ST-Microelectronics
STMicroelectronics ST-Microelectronics
Z0402MF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Z04
Characteristics
Figure 1.
Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2. RMS on-state current versus
ambient temperature (full cycle)
P(W)
7
6
5
4
IT(RMS)(A)
4.5
4.0
3.5
3.0
2.5
Rth(j-a) = Rth(j-l)
3
2.0
1.5
Rth(j-a) = 100°C/W
2
1.0
1
IT(RMS)(A)
0
0.5
Tamb (°C)
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
Figure 3.
Relative variation of thermal
impedance versus pulse
duration
Figure 4.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
K=[Zth(j-a)/Rth(j-a)]
1E+0
1E-1
1E-2
1E-3
1E-3
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
1.5
IGT
IH & IL
1.0
0.5
Tj (°C)
0.0
-40 -20
0
20
40
60
80 100 120 140
Figure 5. Surge peak on-state current
versus number of cycles
Figure 6.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
ITSM (A)
25
20
15
10
5
0
1
Repetitive
Tamb = 25°C
Non repetitive
Tj initial = 25°C
Number of cycles
10
100
t=20ms
One cycle
1000
ITSM (A), I2t (A2s)
500
100
dI/dt limitation:
20A/µs
10
1
0.01
tp (ms)
0.10
1.00
Tj initial = 25°C
ITSM
I2t
10.00
3/8
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